Semiconductor device with a protection diode

ABSTRACT

According to one embodiment, a semiconductor device includes a semiconductor substrate, a semiconductor region, a first and second electrodes. The semiconductor region is provided on the semiconductor substrate via an insulating film. The semiconductor region includes a protection diode. An overvoltage causes breakdown of the protection diode. A PN junction of the protection diode is exposed at an end face of the semiconductor region. A first and second electrodes are provided distally to the exposed end face of the PN junction. The first and second electrodes are connected to the semiconductor region to provide a current to the protection diode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2009-1495.56, filed on Jun.24, 2009; the entire contents of which are incorporated herein byreference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

Trends in recent years of higher speeds and greater information volumeshave led to increasingly higher technical requirements for electronicdevices such as downscaling and increasing frequencies. As a result,requirements to increase the electrostatic discharge (ESD) immunity ofelectronic devices have abruptly increased as well. Also, in smallhigh-speed switching devices used in portable devices, etc., and MOStransistors widely used in voltage converter circuits, etc., downscalingthe device or reducing the gate oxide film thickness causes concernabout reduced ESD immunity.

In such devices, ESD protection diodes are often formed simultaneouslyon the silicon substrate. In particular, protection elements usingpolycrystalline silicon have high degrees of freedom during the devicemanufacturing processes and are widely used.

Because conventional ESD protection diodes are provided in a ring-likeclosed annular structure, the surface area of the central portion is anineffective surface area. Therefore, in the case where the junctionsurface area of a protection diode is increased to obtain a high ESDimmunity, the ineffective surface area increases and the surface area ofthe entire device increases.

Therefore, there have been proposals to provide a high breakdown-voltageprotection diode by connecting a ring-like protection diode formed in achip peripheral portion and the like to a ring-like protection diodeformed in a peripheral portion of an electrode pad.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view illustrating the configuration of asemiconductor device according to an embodiment;

FIG. 2 is a cross-sectional view along line A-A of the semiconductordevice illustrated in FIG. 1;

FIG. 3 is a graph of calculated values of a current density of thesemiconductor device illustrated in FIG. 1;

FIG. 4 is a schematic plan view of a semiconductor device of acomparative example;

FIG. 5 is a schematic plan view illustrating another configuration ofthe semiconductor device according to an embodiment;

FIG. 6 is a schematic plan view illustrating another configuration ofthe semiconductor device according to an embodiment; and

FIG. 7 is a cross-sectional view along line A-A of the semiconductordevice illustrated in FIG. 6.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor device includesa semiconductor region, a first and second electrodes. The semiconductorregion is provided on the semiconductor substrate via an insulatingfilm. The semiconductor region includes a protection diode. Anovervoltage causes breakdown of the protection diode. A PN junction ofthe protection diode is exposed at an end face of the semiconductorregion. A first and second electrodes are provided distally to theexposed end face of the PN junction. The first and second electrodes areconnected to the semiconductor region to provide a current to theprotection diode.

Exemplary embodiments of the invention will now be described in detailwith reference to the drawings.

The drawings are schematic or conceptual; and the relationships amongthe configurations and the lengthwise and crosswise dimensions ofportions, the proportions of sizes among portions, etc., are notnecessarily the same as the actual values thereof. Further, thedimensions and proportions may be illustrated differently among thedrawings, even for identical portions.

In the specification and the drawings of the application, componentssimilar to those described in regard to a drawing thereinabove aremarked with like reference numerals, and a detailed description isomitted as appropriate.

FIG. 1 is a schematic plan view illustrating the configuration of asemiconductor device according to an embodiment.

FIG. 2 is a cross-sectional view along line A-A of the semiconductordevice illustrated in FIG. 1.

As illustrated in FIGS. 1 to 2, a semiconductor device 60 of thisexample includes a semiconductor substrate 5, an insulating film 17, asemiconductor region 50, and first and second electrodes 20 and 21.

The semiconductor region 50 is provided on the semiconductor substrate 5via the insulating film 17. The case is illustrated in this examplewhere the semiconductor region 50 has a band configuration. N-typesemiconductor regions 18 a, 18 b, and 18 c are formed alternately withP-type semiconductor regions 19 a and 19 b in the semiconductor region50 in striped configurations to an end face Q (a side wall). In otherwords, PN junctions among the N-type semiconductor regions 18 a, 18 b,and 18 c and the P-type semiconductor regions 19 a and 19 b are exposedat the end face Q (the side wall) of the semiconductor region 50. Theelectrodes 20 and 21 are provided distally to the end face Q.

The P-type semiconductor region 19 a and the N-type semiconductor region18 a form a protection diode 28 a. Similarly, the P-type semiconductorregion 19 b and the N-type semiconductor region 18 b form a protectiondiode 28 b. The P-type semiconductor region 19 a and the N-typesemiconductor region 18 b form a protection diode 29 a. The P-typesemiconductor region 19 b and the N-type semiconductor region 18 c forma protection diode 29 b.

The multiple protection diodes 28 a, 29 a, 28 b, and 29 b are formed inthe semiconductor region 50 and connected in series in an NPNPNstructure.

The first electrode 20 and the second electrode 21 are connected to theN-type semiconductor regions 18 a and 18 c of the semiconductor region50, respectively. An overvoltage applied to the first electrode 20 andthe second electrode 21 causes breakdown to occur in the protectiondiodes 28 a, 29 a, 28 b, and 29 b having the NPNPN structure; and acurrent flows.

As described below with reference to FIG. 6, such a semiconductor region50 may be integrated with other elements such as transistors. In such acase, the configuration of the semiconductor region 50 is not limited tothe straight-line band configuration illustrated in FIG. 1. Theconfiguration of the semiconductor region 50 also may be a bandconfiguration bent in various configurations such as an L-shape, acrank-like configuration, etc. The planar configuration of theprotection diode also may have a band configuration bent in variousconfigurations corresponding to the configuration of the semiconductorregion 50.

Herein, as illustrated in FIG. 1, a major surface of the semiconductorregion 50 is taken as an XY plane. A first direction perpendicular tothe XY plane is taken as a Z axis. The direction of the current flowingbetween the first and second electrodes 20 and 21 is taken as a Y axis.An X axis is taken to be perpendicular to the Y axis and the Z axis.

The first and second electrodes 20 and 21 have a spacing Ld therebetweenin the Y axis direction.

In such a case, the end face Q (the side wall) of the semiconductorregion 50 where the PN junctions of the protection diodes 28 a, 29 a, 28b, and 29 b are exposed is formed a distance of at least the spacing Ldoutside of an end portion P of the first and second electrodes 20 and 21in the X axis direction. In other words, the semiconductor region 50 isformed such that Ws≧Ld is satisfied, where Ws is the distance betweenthe end face Q and the end portion P.

Although the end face Q and the end portion P are illustrated in FIG. 1only for the right side of the electrodes 20 and 21 and thesemiconductor region 50, the left side is similar.

The semiconductor device 60 of this example can be manufactured by, forexample, the following manufacturing processes.

First, an oxide film (the insulating film) 17 is formed with, forexample, a film thickness of 0.5 μm on an N-type silicon substrate 5.Thereupon, a polycrystalline silicon region (the semiconductor region)50 is formed with, for example, a film thickness of 0.6 μm. Further, theoxide film (the insulating film) 17 is formed with, for example, a filmthickness of 0.1 μm.

Then, boron (B) ion implantation is performed into the polycrystallinesilicon region (the semiconductor region) 50 with, for example, anacceleration voltage of 40 keV and a dose of 5×10¹³ cm⁻². Thepolycrystalline silicon region (the semiconductor region) 50 is a P-typesemiconductor region.

Using photolithography and, for example, RIE (Reactive Ion Etching),unnecessary regions of the polycrystalline silicon region (thesemiconductor region) 50 are removed.

The oxide film (the insulating film) 17 is formed on the entire surface.

Subsequently, arsenic (As) ion implantation is performed in selectiveregions of the polycrystalline silicon region (the semiconductor region)50 using photolithography. The ion implantation is performed with, forexample, an acceleration voltage of 70 keV and a dose of 5×10¹⁴ cm⁻² toform the N-type semiconductor regions 18 a, 18 b, and 18 c. The regionsof the polycrystalline silicon region (the semiconductor region) 50where the arsenic (As) ion implantation is not performed form the P-typesemiconductor regions 19 a and 19 b.

Heat treatment is performed, for example, in a nitrogen gas (N₂)atmosphere at a temperature of 900° C. for 20 minutes to activate eachof the regions.

The first and second electrodes 20 and 21 are formed on the N-typesemiconductor regions 18 a and 18 c.

Electrode interconnection metal to other electrodes and electrode padsis formed as necessary.

The semiconductor device 60 of this example illustrated in FIG. 1 andFIG. 2 can be manufactured by the manufacturing processes recited above.

The diffusion of the impurities of the ion implantation and the heattreatment recited above is about 1 to 2 μm. Therefore, the minimumlength of the N-type semiconductor regions 18 a, 18 b, and 18 c and theP-type semiconductor regions 19 a and 19 b is about 2 μm. Accordingly,the minimum length of an NPN or PNP structure having three P-type orN-type semiconductor regions is 6 μm.

In the semiconductor device 60 of this example, each of the N-typesemiconductor regions 18 a, 18 b, and 18 c and the P-type semiconductorregions 19 a and 19 b is formed with a length of, for example, 4 μm. Thedistance from the first electrode 20 to the most proximal P-typesemiconductor region 19 a is, for example, 4 μm. The distance from thesecond electrode 21 to the most proximal P-type semiconductor region 19b also is, for example, 4 μm.

In such a case, the spacing Ld between the first and second electrodes20 and 21 in the Y axis direction is 20 μm. In this example, thedistance Ws from the end portion P of the first and second electrodes 20and 21 to the end face Q (the side wall) of the semiconductor region 50where the PN junctions of the protection diodes 28 a, 29 a, 28 b, and 29b are exposed is, for example, 20 μm.

The case is illustrated in this example where the N-type semiconductorregions 18 a, 18 b, and 18 c and the P-type semiconductor regions 19 aand 19 b form the protection diodes 28 a, 29 a, 28 b, and 29 b having anNPNPN structure. However, the invention is not limited thereto. Anynumber of N-type semiconductor regions and P-type semiconductor regionsmay be formed alternately to form any number of protection diodes.Moreover, protection diodes having a PNPNP structure also may be formed.

When an overvoltage is applied to the first electrode 20 and the secondelectrode 21 of such a semiconductor device 60, breakdown occurs in theprotection diodes 28 a, 29 a, 28 b, and 29 b formed in the semiconductorregion 50; and a current flows.

In the case where a high voltage is applied to the first electrode 20and a low voltage is applied to the second electrode 21, an overvoltagecauses breakdown to occur in the protection diodes 28 a and 28 b; and acurrent flows from the first electrode 20 toward the second electrode21. Conversely, in the case where a low voltage is applied to the firstelectrode 20 and a high voltage is applied to the second electrode 21,an overvoltage causes breakdown to occur in the protection diodes 29 aand 29 b; and a current flows from the second electrode 21 toward thefirst electrode 20.

FIG. 3 is a graph of calculated values of a current density of thesemiconductor device illustrated in FIG. 1.

The direction of the X axis in FIG. 3 corresponds to the direction ofthe X axis illustrated in FIG. 1. The positions of the X axis in FIG. 3are taken to be the positions passing through the center of the N-typesemiconductor region 18 b in the vertical direction in FIG. 1. The Yaxis is set as illustrated in FIG. 1 with an origin O of the centers ofthe first and second electrodes 20 and 21 in the X axis direction. Acurrent density J is taken as the current density in the Y directionalong the X axis in the case where a current 2×I flows between the firstand second electrodes 20 and 21.

In FIG. 3, a position X along the X axis in such a case is plotted onthe horizontal axis; and the calculated value of the current density Jin the Y axis direction is plotted on the vertical axis.

For the calculation of the current density J, the thickness of thesemiconductor region 50 is taken to be 1 μm; and the Y axis directionlength of each of the first and second electrodes 20 and 21 is taken tobe 6 μm. An X axis direction width Wd of each of the first and secondelectrodes 20 and 21 is taken to be 50 μm; and the current 2×1 is 2 A.

In other words, the end portion P of the first and second electrodes 20and 21 has a position of X=±Wd/2=±25 μm. In FIG. 1, the semiconductordevice 60 is symmetric to the left and right. Therefore, in FIG. 3, thecurrent density J in the Y axis direction along the X axis is calculatedfor the case where a current I of 1 A flows in the portion of 0≦X≦25 μm.

From symmetry, the current I flows parallel to the Y axis at X=0. Also,the current I flows parallel to the Y axis at Y=0, that is, along the Xaxis.

For ESD assuming an Human Body Model (HBM), a current of 1 A correspondsto 1500 V when converted to the voltage of the HBM. For the entiresemiconductor device 60, a current of 2 A flows and corresponds to 3000V.

As illustrated in FIG. 3, the current density 3 at a position about 10μm from the end portion P of the first and second electrodes 20 and 21is substantially zero. Also at the end face Q (the side wall) of thesemiconductor region 50 where the PN junctions of the protection diodes28 a, 29 a, 28 b, and 29 b are exposed, there is no large concentrationof recombination current.

Accordingly, according to the semiconductor device 60 of this example asdescribed below, a protection diode structure can be obtained having ahigh ESD immunity and a low ineffective surface area.

A semiconductor device of a comparative example will now be described.

FIG. 4 is a schematic plan view of the semiconductor device of thecomparative example.

As illustrated in FIG. 4, a semiconductor device 160 of the comparativeexample includes the semiconductor substrate 5, the insulating film 17,a polycrystalline silicon region 150, and first and second electrodes120 and 121.

The cross-sectional view along line A-A of the semiconductor device 160of the comparative example is similar to the cross-sectional view alongline A-A of the semiconductor device 60 of this example illustrated inFIG. 2.

However, in the semiconductor device 160 of the comparative example, anN-type semiconductor region 118 c is formed in a rectangularconfiguration inside the second electrode 121 as well. The planarconfiguration of the polycrystalline silicon region 150 also is arectangular configuration. The planar configurations of N-typesemiconductor regions 118 a, 118 b, and 118 c and P-type semiconductorregions 119 a and 119 b are concentric rectangular configurations formedalternately; and the PN junctions have closed annular structures.Therefore, in the semiconductor device 160 of the comparative example,the polycrystalline silicon region 150 does not have an end face (sidewall) where the PN junctions are exposed. Otherwise, the semiconductordevice 160 is similar to the semiconductor device 60 of this exampleillustrated in FIG. 1 to FIG. 2.

In other words, the P-type semiconductor region 119 a and the N-typesemiconductor region 118 a form a protection diode 128 a. Similarly, theP-type semiconductor region 119 b and the N-type semiconductor region118 b form a protection diode 128 b. The P-type semiconductor region 119a and the N-type semiconductor region 118 b form a protection diode 129a. The P-type semiconductor region 119 b and the N-type semiconductorregion 118 c form a protection diode 129 b.

The multiple protection diodes 128 a, 129 a, 128 b, and 129 b are formedin the polycrystalline silicon region 150 and connected in series in anNPNPN structure.

The N-type semiconductor region 118 a of the outermost portion of thepolycrystalline silicon region 150 and the N-type semiconductor region118 c of the innermost portion of the polycrystalline silicon region 150are connected to the first electrode 120 and the second electrode 121,respectively. By applying an overvoltage to the first electrode 120 andthe second electrode 121, breakdown occurs in the protection diodes 128a, 129 a, 128 b, and 129 b having the NPNPN structure; and a currentflows. Because the current flows between the first electrode 120 and thesecond electrode 121, the portion of the N-type semiconductor region 118c inside the second electrode 121 is an ineffective surface area asdescribed below.

The semiconductor device 160 of the comparative example forms, forexample, an ESD protection diode of a MOS transistor formed on the samesemiconductor substrate 5 by electrically connecting the first electrode120 and the second electrode 121 to the source and gate of the MOStransistor, respectively.

In the case where an ESD voltage is applied between the gate and sourceof the MOS transistor, breakdown occurs in the protection diodes 128 a,129 a, 128 b, and 129 b of the semiconductor device 160; and a currentflows. In other words, the ESD voltage is discharged between the gateand source via the diode structure; and the MOS transistor is protected.

However, the planar configuration of the diode structure has arectangular configuration in which the PN junctions are formed in closedannular structures. The reason behind such a structure is to not exposethe PN junctions at the end face of the polycrystalline silicon region150 because, in the case where the PN junctions are exposed at the endface of the polycrystalline silicon region 150, the crystallinestructure at the end face is disturbed or the end face is afragmentation region occurring due to the manufacturing process; andtherefore, there is a risk of a rapid recombination rate at the endface.

A rapid recombination rate easily causes the undesirable deteriorationof the diode characteristics because, in such a region, an amount ofenergy corresponding to the band gap emitted during the recombinationdestructs the crystal lattice and further increases the regions havingrapid recombination rates. Therefore, an annular structure is employedas a contrivance to avoid the PN junctions from being exposed at the endface of the polycrystalline silicon region 150.

Of course, the protection diode itself must have a high ESD immunity toprotect a MOS transistor and the like. It is necessary, to begin with,that the ESD protection diode has a structure that does not easilydeteriorate.

However, in the case where the annular structure is used to avoiddeterioration of such a protection diode, the surface area efficiency ofthe protection diode portion undesirably decreases.

In other words, generally, a greater diode junction surface areaprovides a better ESD protection function and ensures a greater ESDimmunity. Accordingly, it is necessary to make the diode junctionsurface area as large as possible to obtain a high ESD immunity.However, to increase the diode junction surface area, it is necessary toincrease the circumferential length of the rectangles having the annularstructures as illustrated in FIG. 4. In such a case, the surface area ofthe central portion, i.e., the portion of the N-type semiconductorregion 118 c inside the second electrode 121 illustrated in FIG. 4, isan ineffective surface area. Moreover, this leads to a surface areaincrease of the entire device and increased manufacturing costs and isindustrially unfavorable.

Although it is effective to increase the film thickness of thepolycrystalline silicon region 150, in such a case, it is known thatproblems occur due to cracks and the like due to stress differencesamong the polycrystalline silicon, the oxide films, and the substratesilicon; and the limit is about 1 μm. Thus, attempts to obtain aprotection diode having a good ESD protection function have undesirablycaused an increase of the ineffective surface area and an increase ofthe surface area of the entire device.

Although the case is described in the semiconductor device 160 of thecomparative example where the planar configuration of the protectiondiode is a concentric rectangular configuration, the case is similar fora ring-like configuration.

Conversely, in the semiconductor device 60 of this example, theprotection diodes 28 a, 29 a, 28 b, and 29 b are formed in bandconfigurations in the semiconductor region 50; and there is littleineffective surface area.

In other words, as illustrated in FIG. 3, it is conceivable that acurrent path may be formed between the first and second electrodes 20and 21 in the case where the ESD voltage is applied. In such a case,although the current path spreads outward, the degree of the spread isabout the inter-electrode distance Ld or less. Accordingly, even whenthe ESD voltage is applied, the current does not reach the PN junctionexposed portion of the end face Q (the side wall) of the semiconductorregion 50; and diode structure does not deteriorate radically.

Thus, according to the semiconductor device 60 of this example, aprotection diode structure can be obtained in which a largerecombination current does not concentrate at the PN junction exposedportion of the end face Q (the side wall) of the semiconductor region50; the ESD immunity is high; and the ineffective surface area is low.

FIG. 5 is a schematic plan view illustrating another configuration ofthe semiconductor device according to an embodiment.

As illustrated in FIG. 5, a semiconductor device 60 a of this exampleincludes the semiconductor substrate 5, the insulating film 17, thesemiconductor region 50, and first and second electrodes 20 a and 21 a.

In the semiconductor device 60 a, both end portions 25 in the X axisdirection of the first and second electrodes 20 a and 21 a are formed insemicylindrical configurations. In other words, as illustrated in FIG.5, the planar configurations of the first and second electrodes 20 a and21 a differ from those of the semiconductor device 60 in that both endportions 25 in the X axis direction are formed in arc-likeconfigurations having radii of, for example, 3 μm. Otherwise, thesemiconductor device 60 a is similar to the semiconductor device 60.

Although a configuration is illustrated in this example in which bothend portions 25 are formed in arc-like configurations, the configurationis not limited to an arc-like configuration. It is sufficient for theconfiguration to have a curvature relaxation portion. In other words, itis sufficient for the planar configurations of both end portions 25 suchas those illustrated in FIG. 5 to be non-polygonal and to be formed of acurve.

In the case where the end portion configurations of the first and secondelectrodes 20 and 21 are nearly perpendicular, current concentrationoccurs due to electric field concentration; abnormal heating occurs atsuch portions; and as a result, it is conceivable that diodedeterioration also may occur. Therefore, by providing a curvaturerelaxation portion in the end portions 25, such abnormal currentconcentration is avoided; and the deterioration of the diode structurecan be suppressed.

Accordingly, in the semiconductor device 60 a, a large recombinationcurrent does not concentrate at the PN junction exposed portion of theend face Q (the side wall) of the semiconductor region 50. A protectiondiode structure can be obtained in which current does not concentrate inthe end portions 25 of the first and second electrodes 20 a and 21 a;the ESD immunity is high; and the ineffective surface area is low.

FIG. 6 is a schematic plan view illustrating another configuration ofthe semiconductor device according to an embodiment.

As illustrated in FIG. 6, a semiconductor device 61 of this exampleincludes the semiconductor substrate 5, the insulating film 17,semiconductor regions 50 a to 50 e, the first and second electrodes 20 aand 21 a, a MOS transistor region 40, and an electrode pad 45.

In the semiconductor device 61 of this example, the semiconductorregions 50 a to 50 d are provided in a peripheral portion of thesemiconductor substrate 5. The semiconductor region 50 e is provided ina periphery of the electrode pad 45.

Only the first and second electrodes 20 a and 21 a connected to thesemiconductor region 50 a are illustrated. The first and secondelectrodes connected to the other semiconductor regions 50 b to 50 e areomitted.

Here, the semiconductor substrate 5, the insulating film 17, thesemiconductor region 50 a, and the first and second electrodes 20 a and21 a are similar to those of the semiconductor device 60 a. The planarconfigurations of the semiconductor regions 50 b and 50 c are similar tothe planar configuration of the semiconductor region 50 a except forhaving U-shaped and L-shaped planar configurations, respectively. Thesemiconductor region 50 d is similar to the semiconductor region 50 aexcept for being provided inside the semiconductor region 50 a in theperipheral portion of the semiconductor substrate 5. Although notillustrated, the planar configurations of the protection diodes of thesemiconductor regions 50 b and 50 c, which have the U-shaped andL-shaped planar configurations, may be U-shaped and L-shaped,respectively.

A distance Wp between the semiconductor regions 50 a and 50 b is notparticularly limited and may be zero. However, even in the case wherethe distance Wp is zero and one end of the semiconductor region 50 a isconnected to one end of the semiconductor region 50 b, the PN junctionsare exposed at the end faces of at least the other ends of thesemiconductor regions 50 a and 50 b.

FIG. 7 is a cross-sectional view along line A-A of the semiconductordevice illustrated in FIG. 6.

As illustrated in FIG. 7, a bottom face drain electrode 4 is provided onthe lower side of the semiconductor substrate 5 in the MOS transistorregion 40 of the semiconductor device 61. P-type base regions 6 a, 6 b,and 6 c are formed on the top face of the N-type semiconductor substrate5. N-type source regions 7 a and 7 b are formed on the top face of theP-type base region 6 a. N-type source regions 7 c and 7 d are formed onthe top face of the P-type base region 6 b. N-type source regions 7 eand 7 f are formed on the top face of the P-type base region 6 c.

The MOS transistor region 40 is a region where a MOS transistor elementis formed simultaneously with the semiconductor regions 50 a to 50 e;and the MOS transistor element is protected from ESD by the protectiondiodes formed in the semiconductor regions 50 a to 50 e.

The electrode pad 45 is electrically connected (not illustrated) to agate 8 of the MOS transistor region 40. Although the case is illustratedin this example where one electrode pad 45 is used, any number may beused.

A polycrystalline silicon gate electrode 8 a is formed on a region fromthe N-type source region 7 b to the N-type source region 7 c via theoxide film 17. Similarly, a polycrystalline silicon gate electrode 8 bis formed on a region from the N-type source region 7 d to the N-typesource region 7 e via the oxide film 17.

A source electrode 10 is formed to connect to the N-type source regions7 a to 7 e.

The second electrodes 21 a of the semiconductor regions 50 a to 50 ewhich function as ESD protection diodes are electrically connected (notillustrated) to the polycrystalline silicon gate electrodes 8 a and 8 b.The first electrodes 20 a are electrically connected (not illustrated)to the source electrode 10. Thereby, the MOS transistor region 40 isprotected from the ESD voltage applied between the gate and source.

The case is illustrated in this example where the semiconductorsubstrate 5 is the N-type and the MOS transistor region 40 has anN-channel vertical MOS transistor structure. However, the invention isnot limited thereto. A P-type semiconductor substrate may be used.Further, a P-channel MOS transistor region may be included; and abipolar transistor region may be included.

Hereinabove, exemplary embodiments of the invention are described withreference to specific examples. However, the invention is not limited tothese specific examples. For example, one skilled in the art mayappropriately select specific configurations of components ofsemiconductor devices from known art and similarly practice theinvention. Such practice is included in the scope of the invention tothe extent that similar effects thereto are obtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility; and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor devices practicable by an appropriate designmodification by one skilled in the art based on the semiconductordevices described above as exemplary embodiments of the invention alsoare within the scope of the invention to the extent that the purport ofthe invention is included.

Furthermore, various modifications and alterations within the spirit ofthe invention will be readily apparent to those skilled in the art. Allsuch modifications and alterations should therefore be seen as withinthe scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel devices described herein maybe embodied in a variety of other forms; furthermore, various omissions,substitutions and changes in the form of the devices described hereinmay be made without departing from the spirit of the inventions. Theaccompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of theinventions.

1. A semiconductor device, comprising: a semiconductor region providedon a semiconductor substrate via an insulating film, the semiconductorregion including a protection diode; and first and second electrodesconnected to the semiconductor region to provide a current to theprotection diode, a PN junction of the protection diode being exposed atan end face of the semiconductor region, the first and second electrodesbeing provided distally to the exposed end face of the PN junction, anda distance from each of the first and second electrodes to the end faceof the exposed PN junction being not less than a spacing between thefirst and second electrodes.
 2. The semiconductor device according toclaim 1, wherein a planar configuration of the semiconductor region hasa bent portion.
 3. The semiconductor device according to claim 1,further comprising an electrode pad provided on the semiconductorsubstrate via the insulating film, the semiconductor region beingprovided in a periphery of the electrode pad.
 4. The semiconductordevice according to claim 3, wherein an end portion of each of the firstand second electrodes has a curvature relaxation portion.
 5. Thesemiconductor device according to claim 1, wherein an end portion ofeach of the first and second electrodes has a curvature relaxationportion.
 6. The semiconductor device according to claim 5, wherein aplanar configuration of the curvature relaxation portion is a curvedconfiguration.
 7. The semiconductor device according to claim 5, whereina planar configuration of the curvature relaxation portion is anarc-like configuration.
 8. The semiconductor device according to claim1, further comprising a transistor provided on the semiconductorsubstrate, the semiconductor region being provided in a periphery of thetransistor.
 9. The semiconductor device according to claim 8, furthercomprising an electrode pad provided on the semiconductor substrate viathe insulating film, the semiconductor region being provided in aperiphery of the electrode pad.
 10. The semiconductor device accordingto claim 8, wherein a planar configuration of the semiconductor regionhas a bent portion.
 11. The semiconductor device according to claim 8,wherein an end portion of each of the first and second electrodes has acurvature relaxation portion.
 12. The semiconductor device according toclaim 11, wherein a planar configuration of the curvature relaxationportion is a curved configuration.
 13. The semiconductor deviceaccording to claim 11, wherein a planar configuration of the curvaturerelaxation portion is an arc-like configuration.